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LNBH25LS 数据表(PDF) 14 Page - STMicroelectronics |
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LNBH25LS 数据表(HTML) 14 Page - STMicroelectronics |
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14 / 30 page ![]() Typical application circuits LNBH25LS 14/30 DocID026753 Rev 3 5 Typical application circuits Figure 6: DiSEqC 1.x application circuit Table 5: DiSEqC 1.x bill of material Component Notes R1 (RSEL) SMD resistor. Refer to Table 12: "Electrical characteristics" and ISEL pin description in Table 2: "Pin description" C1 > 25 V electrolytic capacitor, 100 µF or higher is suitable or > 25 V ceramic capacitor, 10 µF or higher is suitable C2 With COMP = 0, > 25 V electrolytic capacitor, 100 µF or higher is suitable or with COMP = 1, > 35 V ceramic capacitor, 22 µF (or 2 x 10 µF) or higher is suitable C3 From 470 nF to 2.2 µF ceramic capacitor placed as close as possible to VUP pins. Higher values allow lower DC-DC noise C5 From 100 nF to 220 nF ceramic capacitor placed as close as possible to VOUT pins. Higher values allow lower DC-DC noise C4, C7 220 nF ceramic capacitors. To be placed as close as possible to VOUT pin D1 STPS130A or similar Schottky diode D2 1N4001-07, S1A-S1M, or any similar general purpose rectifier |
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