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STM8L151C4 数据表(PDF) 103 Page - STMicroelectronics

部件名 STM8L151C4
功能描述  Advanced STM8 core
PDF  142 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8L151C4 数据表(HTML) 103 Page - STMicroelectronics

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STM8L151x4/6, STM8L152x4/6
Electrical parameters
115
9.3.10
Embedded reference voltage
In the following table, data is based on characterization results, not tested in production,
unless otherwise specified.
Table 46. Reference voltage characteristics
Symbol
Parameter
Conditions
Min
Typ
Max.
Unit
IREFINT
Internal reference voltage
consumption
-
-
1.4
-
µA
TS_VREFINT(1)(2)
ADC sampling time when reading
the internal reference voltage
--
5
10
µs
IBUF(2)
Internal reference voltage buffer
consumption (used for ADC)
-
-
13.5
25
µA
VREFINT out
Reference voltage output
-
1.202(3)
1.224
1.242(3)
V
ILPBUF(2)
Internal reference voltage low
power buffer consumption (used
for comparators or output)
-
-
730
1200
nA
IREFOUT(2)
Buffer output current(4)
--
-
1
µA
CREFOUT
Reference voltage output load
-
-
-
50
pF
tVREFINT
Internal reference voltage startup
time
--
2
3
ms
tBUFEN(2)
Internal reference voltage buffer
startup time once enabled (1)
--
-
10
µs
ACCVREFINT
Accuracy of VREFINT stored in the
VREFINT_Factory_CONV byte(5)
--
-
± 5
mV
STABVREFINT
Stability of VREFINT over
temperature
-40 °C
≤TA ≤ 125 °C
-
20
50
ppm/°C
Stability of VREFINT over
temperature
0 °C
≤TA ≤ 50 °C
-
-
20
ppm/°C
STABVREFINT
Stability of VREFINT after 1000
hours
-
--
TBD
ppm
1. Defined when ADC output reaches its final value ±1/2LSB
2. Data guaranteed by design.
3. Tested in production at VDD = 3 V ±10 mV.
4. To guaranty less than 1%
VREFOUT deviation.
5. Measured at VDD = 3 V ±10 mV. This value takes into account VDD accuracy and ADC conversion accuracy.



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