STM32F401CD datasheet(80/135 Pages) STMICROELECTRONICS

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Electrical characteristics

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Figure 25. Typical application with a 32.768 kHz crystal

6.3.9

Internal clock source characteristics

The parameters given in Table 39 and Table 40 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 14.

High-speed internal (HSI) RC oscillator

Table 39. HSI oscillator characteristics (1)

1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of the HSI

oscillator

User-trimmed with the RCC_CR

2. Guaranteed by design, not tested in production

Factory-

calibrated

TA = –40 to 105 °C(3)

3. Guaranteed by characterization, not tested in production

–8

4.5

TA = –10 to 85 °C(3)

–4

TA = 25 °C

–1

tsu(HSI)(2)

HSI oscillator

startup time

-2.2

µs

IDD(HSI)(2)

HSI oscillator

power consumption

-60

µA

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