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STM32F401CD 数据表(PDF) 94 Page - STMicroelectronics |
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STM32F401CD 数据表(HTML) 94 Page - STMicroelectronics |
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94 / 135 page ![]() Electrical characteristics STM32F401xD STM32F401xE 94/135 Input/output AC characteristics The definition and values of input/output AC characteristics are given in Figure 31 and , respectively. Unless otherwise specified, the parameters given in Table 56 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 14. Table 55. Output voltage characteristics Symbol Parameter Conditions Min Max Unit VOL(1) 1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 12. and the sum of IIO (I/O ports and control pins) must not exceed IVSS. Output low level voltage for an I/O pin CMOS port(2) IIO = +8 mA 2.7 V ≤ VDD ≤ 3.6 V 2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52. -0.4 V VOH(3) 3. The IIO current sourced by the device must always respect the absolute maximum rating specified in Table 12 and the sum of IIO (I/O ports and control pins) must not exceed IVDD. Output high level voltage for an I/O pin VDD–0.4 - VOL (1) Output low level voltage for an I/O pin TTL port(2) IIO =+8 mA 2.7 V ≤ VDD ≤ 3.6 V -0.4 V VOH (3) Output high level voltage for an I/O pin 2.4 - VOL(1) Output low level voltage for an I/O pin IIO = +20 mA 2.7 V ≤ VDD ≤ 3.6 V -1.3(4) 4. Guaranteed by characterization results, not tested in production. V VOH(3) Output high level voltage for an I/O pin VDD–1.3(4) - VOL(1) Output low level voltage for an I/O pin IIO = +6 mA 1.8 V ≤ VDD ≤ 3.6 V -0.4(4) V VOH(3) Output high level voltage for an I/O pin VDD–0.4(4) - VOL(1) Output low level voltage for an I/O pin IIO = +4 mA 1.7 V ≤ VDD ≤ 3.6 V -0.4(5) 5. Guaranteed by design, not tested in production.. V VOH(3) Output high level voltage for an I/O pin VDD–0.4(5) - Table 56. I/O AC characteristics(1)(2) OSPEEDRy [1:0] bit value(1) Symbol Parameter Conditions Min Typ Max Unit 00 fmax(IO)out Maximum frequency(3) CL = 50 pF, VDD ≥ 2.70 V - - 4 MHz CL = 50 pF, VDD≥ 1.7 V - - 2 CL = 10 pF, VDD ≥ 2.70 V - - 8 CL = 10 pF, VDD ≥ 1.7 V - - 4 tf(IO)out/ tr(IO)out Output high to low level fall time and output low to high level rise time CL = 50 pF, VDD = 1.7 V to 3.6 V -- 100 ns |
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