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STM32F401CD 数据表(PDF) 86 Page - STMicroelectronics

部件名 STM32F401CD
功能描述  Clock, reset and supply management
PDF  135 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F401CD 数据表(HTML) 86 Page - STMicroelectronics

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Electrical characteristics
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Table 45. Flash memory programming
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
1. Guaranteed by characterization, not tested in production.
Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-16
100(2)
2. The maximum programming time is measured after 100K erase operations.
µs
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
400
800
ms
Program/erase parallelism
(PSIZE) = x 16
-
300
600
Program/erase parallelism
(PSIZE) = x 32
-
250
500
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
1200
2400
ms
Program/erase parallelism
(PSIZE) = x 16
-
700
1400
Program/erase parallelism
(PSIZE) = x 32
-
550
1100
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-2
4
s
Program/erase parallelism
(PSIZE) = x 16
-1.3
2.6
Program/erase parallelism
(PSIZE) = x 32
-1
2
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 8
-8
16
s
Program/erase parallelism
(PSIZE) = x 16
-5.5
11
Program/erase parallelism
(PSIZE) = x 32
-4
8
Vprog
Programming voltage
32-bit program operation
2.7
-
3.6
V
16-bit program operation
2.1
-
3.6
V
8-bit program operation
1.7
-
3.6
V
Table 46. Flash memory programming with VPP voltage
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit
tprog
Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
-
16
100(2)
µs
tERASE16KB Sector (16 KB) erase time
-
230
-
ms
tERASE64KB Sector (64 KB) erase time
-
490
-
tERASE128KB Sector (128 KB) erase time
-
875
-
tME
Mass erase time
-
1.750
-
s



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