| 数据搜索系统,热门电子元器件搜索 |
|
L9679P 数据表(PDF) 45 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
L9679P 数据表(HTML) 45 Page - STMicroelectronics |
|
45 / 272 page ![]() DocID029275 Rev 1 45/272 L9679P Start-up and power control 271 Figure 19. ER switch state diagram 6.7 SYNCBOOST boost regulator The SYNCBOOST boost regulator also operates at 1.882 MHz allowing the user to select smaller less expensive external components. The regulator provides a 12 V/14.75 V nominal for the sync pulse feature used in PSI-5 bussed satellite sensor configuration. The regulator also provides the power for the SATBUCK regulator. The SyncBoost switching regulator uses a classical peak current mode control loop to properly regulate the output voltage and includes an over-voltage protection that immediately switch off the PowerMOS to protect the device. The regulator includes also a soft start circuit which apply a ramp on the over current threshold from the 40% of IOC_SYNCBST value to the maximum one with 16 steps and within TSOFTST_OC_SYNCBST. The soft start is restarted every time the regulator is enabled, namely there is a transition from the SYNCBOOST_OFF state to the SYNCBOOST_ON state. In normal operation, the SYNCBOOST regulator operates directly from battery providing a voltage level to operate the sync pulse driver circuit. Should the input voltage be greater than regulation point, the output voltage will track the input voltage less any drops in the external components. The boost regulator is enabled automatically by the power control state machine, but can be disabled on purpose via SPI command through the SYS_CTL(SYNCBST_EN) bit. The regulation point is fixed at a nominal 12 V at startup. User may increase the output regulation voltage to 14.75 V nominal by setting the SATV bit via a dedicated SPI command, should an extended voltage range be needed. Boost converter diagnostics include over voltage and under voltage, reported by the S_BST_NOK bit in the POWER_STATE register, and the circuit is fully protected against shorts. The integrated FET featuring the boost switch is protected against short to battery by means of a thermal shutdown circuit. When thermal fault is detected the FET is switched off and latched in this state until the related fault flag ERBST_OT in the FLTSR register is read. |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |