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S29AS016J 数据表(PDF) 44 Page - Cypress Semiconductor |
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S29AS016J 数据表(HTML) 44 Page - Cypress Semiconductor |
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44 / 59 page ![]() Document Number: 002-01122 Rev.*L Page 44 of 59 S29AS016J 18. AC Characteristics 18.1 Read Operations Notes 1. Not 100% tested. 2. See Figure 16.1 on page 43 and Table on page 43 for test specifications. 3. tRC must be same or longer than 70 ns right before read access to the flash (for devices with model numbers 01 and 02 only). Figure 18.1 Read Operations Timings Parameter Description Speed Options JEDEC Std Test Setup 70 Unit tAVAV tRC Read Cycle Time (Note 1) Min 70 ns tAVQV tACC Address to Output Delay CE# = VIL OE# = VIL Max 70 tELQV tCE Chip Enable to Output Delay OE# = VIL Max 70 tGLQV tOE Output Enable to Output Delay Max 25 tEHQZ tDF Chip Enable to Output High-Z (Note 1) Max 25 tGHQZ tDF Output Enable to Output High-Z (Note 1) Max 25 tOEH Output Enable Hold Time (Note 1) Read Min 0 Toggle and Data# Polling Min 10 tAXQX tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First (Note 1) Min 0 tCE Outputs WE# Addresses CE# OE# HIGH Z Output Valid HIGH Z Addresses Stable tRC tACC tOEH tOE 0 V RY/BY# RESET# tDF tSR/W tOH |
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