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S29AS016J 数据表(PDF) 20 Page - Cypress Semiconductor

部件名 S29AS016J
功能描述  16 Mbit (2 M x 8-Bit/1 M x 16-Bit), 1.8 V Boot Sector Flash
PDF  59 Pages
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制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
标志 CYPRESS - Cypress Semiconductor

S29AS016J 数据表(HTML) 20 Page - Cypress Semiconductor

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Document Number: 002-01122 Rev.*L
Page 20 of 59
S29AS016J
7.14
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent
writes (refer to Table on page 32 for command definitions). In addition, the following hardware data protection measures prevent
accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and
power-down transitions, or from system noise.
7.14.1
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down.
The command register and all internal program/erase circuits are disabled, and the device resets. Subsequent writes are ignored
until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when
VCC is greater than VLKO.
7.14.2
Write Pulse Glitch Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
7.14.3
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be
a logical zero (VIL) while OE# is a logical one (VIH).
7.14.4
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal
state machine is automatically reset to reading array data on power-up.



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