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S29AS016J 数据表(PDF) 53 Page - Cypress Semiconductor

部件名 S29AS016J
功能描述  16 Mbit (2 M x 8-Bit/1 M x 16-Bit), 1.8 V Boot Sector Flash
PDF  59 Pages
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制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
标志 CYPRESS - Cypress Semiconductor

S29AS016J 数据表(HTML) 53 Page - Cypress Semiconductor

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Document Number: 002-01122 Rev.*L
Page 53 of 59
S29AS016J
19. Erase and Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25°C, VCC = 1.8 V, 100,000 cycles, checkerboard data pattern.
2. Under worst case conditions of 90°C, VCC = 1.65 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program
times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table on page 32 for further information on
command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
20. Package Pin Capacitance
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
10
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
19.5
s
Byte Programming Time
6
µs
Excludes system level
overhead (Note 5)
Word Programming Time
6
150
µs
Chip Programming Time
(Note 3)
Byte Mode
20
160
s
Word Mode
14
120
s
Parameter Symbol
Parameter Description
Test Setup
Package
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
TSOP
4.0
6.0
pF
BGA
4.2
5.0
COUT
Output Capacitance
VOUT = 0
TSOP
4.5
5.5
BGA
5.4
6.5
CIN2
Control Pin Capacitance
VIN = 0
TSOP
5
6.5
BGA
3.9
4.7
CIN3
WP# Pin Capacitance
VIN = 0
TSOP
8.5
10.0
BGA
8.5
10.0



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