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MAS6512 数据表(PDF) 16 Page - Micro Analog systems |
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MAS6512 数据表(HTML) 16 Page - Micro Analog systems |
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16 / 32 page ![]() DA6512.003 2 December, 2016 16 (32) EEPROM WRITE PROCEDURE Figure 3. Flow chart for MAS6512 EEPROM write Important note: Before EEPROM programming make sure that in the Test register (E1/61HEX) the SOSC=00 is selected. That selects 200 kHz system clock frequency which is required for the proper EEPROM programming pulses. This condition is guaranteed by making device reset either using the reset register (E0/60HEX) or the XCLR pin. Note: In the “VERIFY WRITTEN DATA” step it could be also additionally checked that the EEPROM status register (EC/6CHEX) does not indicate read errors. START INITIAL CONDITIONS Reset device by XCLR or by writing any data to the reset register E0/60HEX POWER UP DEVICE Connect supply voltage VDD ENABLE EEPROM WRITE Write 04HEX to the EEPROM write enable register E9/69HEX WAIT Wait minimum 16ms after writing byte (8-bit) to EEPROM STOP DISABLE EEPROM WRITE Write 00HEX to the EEPROM write enable register E9/69HEX WRITE DATA TO EEPROM Write data byte (8-bit) to selected EEPROM memory address no Write more data? yes VERIFY WRITTEN DATA Read the written data byte (8-bit) from the EEPROM memory address |
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