DA6512.003

2 December, 2016

3 (32)

FUNCTIONAL DESCRIPTION

In battery operated applications the VDD of the

MAS6512 can vary along with battery capacity. In

such case the VDD level monitoring feature can be

useful to indicate battery level, help choosing

between different power modes in the system or

even using measured VDD level for compensating

VDD dependencies. In the VDD level monitoring

mode the on-chip regulator has to be disabled.

Communication with MAS6512 is handled by the

serial interface compatible with either a bi-

directional 2-wire I2C bus or a 4-wire SPI bus. The

XSPI pin is for selecting which bus type is used.

Note: The 2-wire I2C bus of MAS6512 supports only

basic I2C bus communication protocol but not for

example 10-bit addressing, arbitration and clock

stretching features of the I2C bus specification.

The XCLR pin can be used to hard reset the device

including the serial communication. However device

reset is possible also via serial bus using the reset

register. Despite of on chip power on reset (POR)

circuit it is recommended to reset the device

manually after every power up to guarantee proper

register settings after any VDD rise conditions.

The EOC pin indicates if a conversion has finished

and the result is ready to be read from the memory

via the serial interface. Using the EOC signal is not

necessary since it is alternatively possible to wait at

least maximum conversion time period before

reading out the result.

ABSOLUTE MAXIMUM RATINGS

All Voltages with Respect to Ground

Parameter

Symbol

Conditions

Min

Max

Unit

Supply Voltage

-0.3

5.0

V

Voltage Range for All Pins

-0.3

V

Latchup Current Limit

For all pins, test according to

JESD78A.

-100

+100

mA

Junction Temperature

+ 150

°C

Storage Temperature

Note 1

- 55

+125

°C

Note 1: See EEPROM memory data retention at hot temperature. Storage or bake at hot temperatures will reduce the wafer level trimming

and calibration data retention time.

Note: The absolute maximum rating values are stress ratings only. Functional operation of the device at conditions between maximum

operating conditions and absolute maximum ratings is not implied and EEPROM contents may be corrupted. Exposure to these conditions

for extended periods may affect device reliability (e.g. hot carrier degradation, oxide breakdown). Applying conditions above absolute

maximum ratings may be destructive to the devices.

Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages (ESD).

RECOMMENDED OPERATION CONDITIONS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Supply Voltage

Capacitance and VDD level

monitoring modes

Note 1

1.8

2.7

3.6

V

Temperature mode

Note 1

1.9

2.7

3.6

V

Operating Temperature

-40

+25

+85

°C

EEPROM Write

Temperature

Note 2

+10

+25

+40

°C

Note 1. In capacitance measurement and VDD level monitoring the regulator must be disabled (TEMPREGEN=0) which allows operation

down to 1.8V. In temperature measurement the typ 1.8V regulator has to be enabled (TEMPREGEN=1) which limits the minimum supply

voltage down to 1.9V.

Note 2: EEPROM write operation is recommended to be done at room temperature