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LTC3370 数据表(PDF) 7 Page - Linear Technology |
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LTC3370 数据表(HTML) 7 Page - Linear Technology |
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7 / 44 page ![]() LTC3372 7 Rev. A For more information www.analog.com The l denotes the specifications which apply over the specified operating junction temperature range, otherwise specifications are at TA = 25°C (Note 2), VIN = 12V, VRUN = 5V, VOUT = VINA-H = 3.3V unless otherwise noted. ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Interface Logic Pins (EN1, EN2, EN3, EN4) VEN Enable Rising Threshold All LV Regulators Disabled l 400 730 1200 mV Enable Rising Threshold At Least One LV Regulator Enabled l 380 400 420 mV Enable Falling Threshold l 290 315 340 mV IEN Enable Pin Leakage Current EN = 3.3V 1 µA CT Timing Parameters; CT = 10nF tWDIO Time from WDO Low Until Next WDO Low CT = 10nF 9.7 12.9 16.1 s tWDI Time from Last WDI Until Next WDO Low CT = 10nF 1.22 1.62 2.03 s tWDO WDO Low Time Absent a Transition at WDI CT = 10nF 160 202 280 ms tRST RST Assertion Delay CT = 10nF 160 202 280 ms tWDL Watchdog Lower Boundary CT = 10nF 38 50.6 63 ms Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC3372 is tested under pulsed load conditions such that TJ ≈ TA. The LTC3372E is guaranteed to meet specifications from 0°C to 85°C operating junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC3372I is guaranteed over the –40°C to 125°C operating junction temperature range. The LTC3372H is guaranteed over the –40°C to 150°C operating junction temperature range. High junction temperatures degrade operating lifetimes; operating lifetime is derated for junction temperatures greater than 125°C. Note that the maximum ambient temperature consistent with these specifications is determined by specific operating conditions in conjunction with board layout, the rated package thermal impedance and other environmental factors. The junction temperature (TJ in °C) is calculated from the ambient temperature (TA in °C) and power dissipation (PD in Watts) according to the formula: TJ = TA + (PD • θJA) where θJA (in °C/W) is the package thermal impedance. Note 3: This IC includes overtemperature protection which protects the device during momentary overload conditions. Junction temperatures will exceed 150°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. Note 4: The IQ (Total Input Supply Quiescent Current) is the total average current drawn from the input power supply by a typical application in Burst Mode with no load currents (from either the HV Controller VOUT or the LV Regulators’ VOUT1-4). Note 5: The HV Controller’s output regulation is tested in a feedback loop that servos the ITH pin to a specified voltage and measures the resulted voltage at VOUT/EXTVCC pin. Note 6: Delays are measured using 50% levels, with TG and BG driving minimum capacitive load. Note 7: The minimum on-time conditions is specified for an inductor peak-to-peak ripple current ≥40% of IMAX (see Minimum On-Time Considerations in the Applications Information section). Note 8: The IQ(VINA-H) (Quiescent Current into VINA-H Pins) are measured with power switches not switching. Dynamic supply current when switching may be higher due to the gate charge being delivered. Note 9: The current limit features are intended to protect the IC from short term or intermittent fault conditions. Continuous operation above the maximum specified pin current rating may result in device degradation over time. Note 10: The soft-start is the time from the first top switch turn on, after an enable rising, until the feedback has reached 90% of its nominal regulation voltage. Note 11: Do not apply a voltage or current source to these pins. They must be connected to the gates of the external power MOSFETs, otherwise permanent damage may occur. |
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