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GD25S512MDFJS 数据表(PDF) 27 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25S512MDFJS 数据表(HTML) 27 Page - GigaDevice Semiconductor (Beijing) Inc. |
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27 / 87 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25S512MD 27 7.9. Write Extended Register (C5H) The Write Extended Register command could be executed no matter the Write Enable Latch (WEL) bit is 0 or 1.The Write Extended Register instruction is entered by driving CS# low, sending the instruction code “C5H”, and then writing the Extended Register data Byte as illustrated in Figure 12. Upon power up or the execution of a Software/Hardware Reset, the Extended Register bit values will be cleared to 0. Figure 12 Write Extended Register Sequence Diagram 7.10. Read Data Bytes (READ 03H or 4READ 13H) The Read Data Bytes (READ) command is followed by a 3-Byte address (A23-A0), and each bit being latched-in on the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, and each bit being shifted out, at a Max frequency fR, on the falling edge of SCLK. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. The whole memory of single GD25B256D can, therefore, be read with a single Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 13 Read Data Bytes Sequence Diagram (ADS=0) Figure 14 Read Data Bytes Sequence Diagram (ADS=1) Command 0 1 2 3 4 5 6 7 03H CS# SCLK SI SO High-Z 8 9 10 28 29 30 31 32 MSB 3 2 1 0 34 35 36 37 33 23 22 21 7 6 5 4 3 2 1 0 38 39 24-bit address MSB Data Out1 Data Out2 Command 0 1 2 3 4 5 6 7 03H CS# SCLK SI SO High-Z 8 9 10 36 37 38 39 40 MSB 3 2 1 0 42 43 44 45 41 31 30 29 7 6 5 4 3 2 1 0 46 47 32-bit address MSB Data Out1 Data Out2 Command 0 1 2 3 4 5 6 7 C5H CS# SCLK SI SO High-Z 8 9 10 11 12 13 14 15 MSB 7 6 5 4 3 2 1 0 Extended Addr. Register In |
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