GD25S512MDFJS datasheet(71/87 Pages) GIGADEVICE

部件名	GD25S512MDFJS

功能描述	3.3V Uniform Sector Dual and Quad Serial Flash

PDF	87 Pages

Scroll/Zoom	100%

制造商	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

网页	http://www.gigadevice.com/

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71 / 87 page

3.3V Uniform Sector

Dual and Quad Serial Flash

GD25S512MD

8. ELECTRICAL CHARACTERISTICS

8.1. POWER-ON TIMING

Figure 70 Power-on Timing

Vcc(max)

Vcc(min)

VWI

tVSL

Chip Selection is not allowed

Device is fully

accessible

Time

Table 25 Power-Up Timing and Write Inhibit Threshold

Symbol

Parameter

Min

Max

Unit

tVSL

VCC (min) To CS# Low

2.5

VWI

Write Inhibit Voltage

1.5

2.5

8.2. INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1 (each Byte contains FFH). The Status

8.3. ABSOLUTE MAXIMUM RATINGS

Table 26 Absolute Maximum Ratings

Parameter

Value

Unit

Ambient Operating Temperature

-40 to 85

-40 to 105

-40 to 125

℃

Storage Temperature

-65 to 150

℃

Applied Input/Output Voltage

-0.6 to VCC+0.4

Transient Input/Output Voltage (note: overshoot)

-2.0 to VCC+2.0

VCC

-0.6 to 4.2

GD25S512MDFJS 数据表(PDF) 71 Page - GigaDevice Semiconductor (Beijing) Inc.

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