S29AL008D55BAI011 datasheet(49/55 Pages) SPANSION

49 / 55 page

June 16, 2005 S29AL008D_00A3

S29AL008D

Da t a

S h ee t

AC Characteristics

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 3.0 V VCC, 1,000,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

Erase and Programming Performance

Parameter

Typ Note 1

Max Note 2

Unit

Comments

Sector Erase Time

0.7

Excludes 00h programming

prior to erasure

Chip Erase Time

Byte Programming Time

210

µs

Excludes system level

overhead Note 5

Word Programming Time

210

µs

Chip Programming Time

Note 3

Byte Mode

8.4

Word Mode

5.8

tGHEL

tWS

OE#

CE#

WE#

RESET#

Data

tAH

Addresses

tCP

DQ7

DOUT

tWC

tAS

tCPH

Data# Polling

A0 for program

55 for erase

tWHWH1 or

RY/BY#

tWH

PD for program

30 for sector erase

10 for chip erase

555 for program

2AA for erase

PA for program

SA for sector erase

555 for chip erase

tBUS

Notes:

1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data

written to the device.

2. Figure indicates the last two bus cycles of command sequence.

3. Word mode address used as an example.

Figure 24. Alternate CE# Controlled Write Operation Timings

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