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S29AL008D55BAI011 数据表(PDF) 50 Page - SPANSION

部件名 S29AL008D55BAI011
功能描述  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
PDF  55 Pages
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制造商  SPANSION [SPANSION]
网页  http://www.spansion.com
标志 SPANSION - SPANSION

S29AL008D55BAI011 数据表(HTML) 50 Page - SPANSION

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S29AL008D
S29AL008D_00A3 June 16, 2005
Da t a
S h ee t
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 5, on page 25 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Table 13. Latchup Characteristics
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Table 14. TSOP, SO, and BGA Pin Capacitance
Parameter
Symbol
Parameter Description
Test Setup
Package
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
TSOP, SO
6
7.5
pF
BGA
4.2
5.0
COUT
Output Capacitance
VOUT = 0
TSOP, SO
8.5
12
BGA
5.4
6.5
CIN2
Control Pin Capacitance
VIN = 0
TSOP, SO
7.5
9
BGA
3.9
4.7



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