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S29AL008D55BAI011 数据表(PDF) 22 Page - SPANSION

部件名 S29AL008D55BAI011
功能描述  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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S29AL008D55BAI011 数据表(HTML) 22 Page - SPANSION

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S29AL008D
S29AL008D_00A3 June 16, 2005
Da t a
S h ee t
Note: See Table 5, on page 25 for program command sequence.
Figure 3. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations. Table 5, on page 25 shows the address and data
requirements for the chip erase command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ig-
nored. Note that a hardware reset during the chip erase operation immediately
terminates the operation. The Chip Erase command sequence should be reiniti-
ated once the device returns to reading array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. See Write Operation Status, on page 27 for information on
these status bits. When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer latched.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress



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