S29AL008D55BAI011 datasheet(12/55 Pages) SPANSION

12 / 55 page

S29AL008D

S29AL008D_00A3 June 16, 2005

Da t a

S h ee t

The internal state machine is set for reading array data upon device power-up,

or after a hardware reset. This ensures that no spurious alteration of the memory

content occurs during the power transition. No command is necessary in this

mode to obtain array data. Standard microprocessor read cycles that assert valid

addresses on the device address inputs produce valid data on the device data

outputs. The device remains enabled for read access until the command register

contents are altered.

See Reading Array Data, on page 19 for more information. Refer to the AC table

for timing specifications and to Figure 13, on page 38 for the timing diagram. ICC1

in the DC Characteristics table represents the active current specification for

reading array data.

Writing Commands/Command Sequences

To write a command or command sequence (which includes programming data

to the device and erasing sectors of memory), the system must drive WE# and

CE# to VIL, and OE# to VIH.

For program operations, the BYTE# pin determines whether the device accepts

program data in bytes or words. Refer to Word/Byte Configuration, on page 11

for more information.

The device features an Unlock Bypass mode to facilitate faster programming.

Once the device enters the Unlock Bypass mode, only two write cycles are re-

quired to program a word or byte, instead of four. The Word/Byte Program

Command Sequence, on page 20 contains details on programming data to the

device using both standard and Unlock Bypass command sequences.

An erase operation can erase one sector, multiple sectors, or the entire device.

Table 2, on page 14 and Table 3, on page 15 indicate the address space that each

sector occupies. A sector address consists of the address bits required to uniquely

select a sector. The Command Definitions, on page 19 contains details on erasing

a sector or the entire chip, or suspending/resuming the erase operation.

After the system writes the autoselect command sequence, the device enters the

autoselect mode. The system can then read autoselect codes from the internal

cycle timings apply in this mode. Refer to the Autoselect Mode, on page 15 and

Autoselect Command Sequence, on page 20 for more information.

ICC2 in the DC Characteristics table represents the active current specification for

the write mode. The AC Characteristics, on page 38 contains timing specification

tables and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system may check the status of the

operation by reading the status bits on DQ7–DQ0. Standard read cycle timings

and ICC read specifications apply. Refer to Write Operation Status, on page 27

for more information, and to AC Characteristics, on page 38 for timing diagrams.

Standby Mode

When the system is not reading or writing to the device, it can place the device

in the standby mode. In this mode, current consumption is greatly reduced, and

the outputs are placed in the high impedance state, independent of the OE#

input.

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