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CDCDB2000NPPR 数据表(PDF) 7 Page - Texas Instruments |
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CDCDB2000NPPR 数据表(HTML) 7 Page - Texas Instruments |
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7 / 33 page ![]() 7 CDCDB2000 www.ti.com SNAS787 – NOVEMBER 2019 Product Folder Links: CDCDB2000 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings Over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VDD, VDD_A Power supply voltage –0.3 3.6 V VIN IO input voltage GND VDD + 0.3 V TJ Junction temperature 125 °C Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±3000 V Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1000 6.3 Recommended Operating Conditions Over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VDD IO supply voltage 3.135 3.3 3.465 V VDD_A Core supply voltage 3.135 3.3 3.465 V TA Ambient temperature –40 85 °C TJ Junction temperature 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) CDCDB2000 UNIT NPP (GQFN) 80 PINS RθJA Junction-to-ambient thermal resistance 32.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 31.2 °C/W RθJB Junction-to-board thermal resistance 15.9 °C/W ΨJT Junction-to-top characterization parameter 0.4 °C/W ΨJB Junction-to-board characterization parameter 15.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.5 °C/W 6.5 Electrical Characteristics VDD, VDD_A = 3.3 V ± 5 %, -40 °C < TA < 85 °C. Typical values are at VDD = VDD_A = 3.3 V, 25 °C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CURRENT CONSUMPTION IDD_A Core supply current Active mode. CKPWRGD_PD# = 1 12 mA Power down mode. CKPWRGD_PD# = 0 8 |
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