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CDCDB2000NPPR 数据表(PDF) 9 Page - Texas Instruments |
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CDCDB2000NPPR 数据表(HTML) 9 Page - Texas Instruments |
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9 / 33 page ![]() 9 CDCDB2000 www.ti.com SNAS787 – NOVEMBER 2019 Product Folder Links: CDCDB2000 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Electrical Characteristics (continued) VDD, VDD_A = 3.3 V ± 5 %, -40 °C < TA < 85 °C. Typical values are at VDD = VDD_A = 3.3 V, 25 °C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT (6) Measured from rising edge of any CKx output to any other CKx output. tSKEW Skew between outputs (6)50 ps JCKx_PCIE Additive jitter DB2000QL filter 0.08 ps, rms Additive jitter for PCIe5 PCIe5.0 filter 0.03 ps, rms Additive jitter for PCIe4 PLL BW = 2 - 5 MHz; CDR = 10 MHz Input clock slew rate ≥ 1.8 V/ns 0.08 ps, rms Additive jitter for PCIe3 Input clock slew rate ≥ 0.6 V/ns 0.15 ps, rms JCKx_PCIE Additive jitter for PCIe2 PCIe2 filter 0.2 ps, rms JCKx_PCIE Additive jitter for PCIe1 PCIe1 filter 5 ps, rms JCKx Additive jitter fIN = 100 MHz; slew rate ≥ 3 V/ns; 12 kHz to 20 MHz integration bandwidth. 155 fs, rms SMBUS INTERFACE, SIDE-BAND INTERFACE, OEx#, CKPWRGD_PD#, SBEN VIH High-level input voltage 2.0 V VIL Low-level input voltage 0.8 IIL Input leakage current With internal pull up/pull-down GND < VIN < VDD –30 30 uA Without internal pull up/pull- down –5 5 CIN Input capacitance 4.5 pF COUT Output capacitance 4.5 pF 3-LEVEL DIGITAL INTERFACE (SA_0, SA_1) VIHT High-level input voltage 2.4 V VIMT Mid level input voltage 1.3 VDD/2 1.8 VILT Low-level input voltage 0.9 IINT Input high current VIN = VDD, VIN = GND -10 10 uA ILeak Input leakage current With internal pull up/pull-down GND < VIN < VDD –30 30 6.6 Timing Requirements VDD, VDD_A = 3.3 V ± 5 %, -40 °C < TA < 85 °C. Typical values are at VDD = VDD_A = 3.3 V, 25 °C (unless otherwise noted) MIN NOM MAX UNIT SMBUS-COMPATIBLE INTERFACE TIMING fSMB SMBus operating frequency 10 100 kHz tBUF Bus free time between STOP and START 4.7 µs tHD_STA START condition hold time 4 tSU_STA START condition setup time 4.7 tSU_STO STOP condition setup time 4 tHD_DAT SMBDAT hold time 300 ns tSU_DAT SMBDAT setup time 250 tTIMEOUT Detect SMBCLK low timeout 25 35 ms tLOW SMBCLK low period 4.7 µs tHIGH SMBCLK high period 4 50 tLOW_SL Cumulative clock low extend time 25 ms |
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