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ATSAM9743 数据表(PDF) 12 Page - ATMEL Corporation |
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ATSAM9743 数据表(HTML) 12 Page - ATMEL Corporation |
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12 / 21 page ![]() 12 ATSAM9743 1773B–DRMSD–11/02 Table 9. Parameters for External 8-bit SRAM Read/Write Symbol Parameter Min Typ Max Unit tRC Word (2 x bytes) read cycle time 5 x tCK 6 x tCK ns t CSOE Chip select low. Address valid to WOE low 2 x t CK - 5 3 x t CK + 5 ns t POE Output enable pulse width 3 x t CK ns tACE Chip select. Access low byte access time. 3 x tCK - 5 ns t OE Output enable low byte access time t CK - 5 ns t ORB Output enable low to byte select high t CK ns tACH Byte select high byte access time 2 x tCK- 5 ns t DF Chip select or WOE high to input data HI-Z 0 2 x t CK - 5 ns t WC Write (2 x bytes) write cycle time 5 x t CK 6 x t CK ns tCSWE 1st WWE low from CS or address or WOE 2 x tCK - 10 ns t WP Write (low and high byte) pulse width 1.5 x t CK - 5 ns t DW1 Data out low byte setup time 1.5 x t CK - 10 ns tDH1 Data out low byte hold time 0.5 x tCK + 10 ns t AS RBS high to second write pulse 0.5 x t CK - 5 ns t DW2 Data out high byte setup time 2 x t CK - 10 ns tDH2 Data out high byte hold time 10 ns |
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