Electrical data

PWD13F60

6/26

DocID030865 Rev 2

3

Electrical data

3.1

Absolute maximum ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Test condition

Value

Unit

MOSFET drain-to-

source voltage

600

V

-

-0.3 to 19

V

VCC to SENSE pin

voltage

-

-0.3 to 19

V

Bootstrap voltage

-

GNDx -0.3 to 600

V

BOOTx to OUTx pin

voltage

-

-0.3 to 19

V

Drain current (per

MOSFET)

8A

2. Characterized, not tested in production.

6.9

A

3. The value specified by the design factor, pulse duration limited by max. junction temperature and SOA.

32

A

Source-drain diode

current (per diode)

8A

32

A

Full bridge outputs slew

rate (10% - 90%)

(2)

40

V/ns

Logic inputs voltage

range

-

-0.3 to 15

V

Junction temperature

-

-40 to 150

°C

Storage temperature

-

-40 to 150

°C

Total power

4. Value calculated basing on thermal resistance, power uniformly distributed over the four power MOSFETs,

still air.

450

W

5. The device mounted on a FR4 2s2p board as JESD51-5/7.

6. Actual applicative board max. dissipation could be higher or lower depending on the layout and cooling

techniques.

6.9

W