PWD13F60 datasheet(1/26 Pages) STMICROELECTRONICS

部件名	PWD13F60

功能描述	High-density power driver -high voltage full bridge with integrated gate driver

PDF	26 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 26 page

This is information on a product in full production.

November 2017

DocID030865 Rev 2

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PWD13F60

High-density power driver -

high voltage full bridge with integrated gate driver

Datasheet - production data

Features

 Power system-in-package integrating gate

drivers and high-voltage power MOSFETs

– Low RDS(on) = 320 mΩ

–BVDSS = 600 V

 Suitable for operating as

– Full bridge

– Dual independent half bridges

 Wide driver supply voltage down to 6.5 V

 UVLO protection on supply voltage

 3.3 V to 15 V compatible inputs with hysteresis

and pull-down

 Interlocking function to prevent cross

conduction

 Internal bootstrap diode

 Outputs in phase with inputs

 Very compact and simplified layout

 Flexible, easy and fast design

Applications

 Motor drivers for industrial and home

appliances

 Factory automation

 Fans and pumps

 HID, ballasts

 Power supply units

 DC-DC and DC-AC converters

Description

The PWD13F60 is a high-density power driver

integrating gate drivers and four N-channel power

MOSFETs in dual half bridge configuration.

The integrated power MOSFETs have low RDS(on)

of 320 m

Ω and 600 V drain-source breakdown

voltage, while the embedded gate drivers high

side can be easily supplied by the integrated

bootstrap diode. The high integration of the

device allows to efficiently drive loads in a tiny

space.

The PWD13F60 device accepts a supply voltage

(VCC) extending over a wide range and is

protected by means of low-voltage UVLO

detection on the supply voltage.

The input pins extended range allows an easy

interfacing with microcontrollers, DSP units or

Hall effect sensors.

The device is available in a compact VFQFPN

package.

VFQFPN 10 x 13 x 1.0 mm

www.st.com

类似零件编号 - PWD13F60

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类似说明 - PWD13F60

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