PWD13F60 datasheet(9/26 Pages) STMICROELECTRONICS

部件名	PWD13F60

功能描述	High-density power driver -high voltage full bridge with integrated gate driver

PDF	26 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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9 / 26 page

DocID030865 Rev 2

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PWD13F60

Electrical characteristics

4.2

Power MOSFET

VCCx = 15 V; TJ = 25 °C, unless otherwise specified.

Table 6. Power MOSFET electrical characteristics

Symbol

Parameter

Test condition

Min. Typ. Max. Unit

MOSFET on/off states

V(BR)IDSS

Drain-source breakdown

voltage

ID = 1 mA(1)

600

IDSS

Zero gate voltage drain

current

VDS = 600 V

µA

VGS(th) Gate threshold voltage

VDS = VGS, ID = 250 µA(1)

RDS(on)

Static drain-source on-

resistance

ID = 3 A; VGS = 10 V

0.32 0.425



MOSFET avalanche

IAS

Avalanche current, repetitive

or not repetitive

Pulse width limited by TJ max.(1)

EAS

Single pulse avalanche

energy

Starting TJ = 25 °C, ID = IAS , VDD = 50 V(1)

162

Source-drain diode

VSD

Diode forward on voltage

LINx = GND;

HINx = GND;

ISD = 3 A

0.8

1.25

Tested at the wafer level before packaging.

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