PWD13F60 datasheet(7/26 Pages) STMICROELECTRONICS

部件名	PWD13F60

功能描述	High-density power driver -high voltage full bridge with integrated gate driver

PDF	26 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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7 / 26 page

DocID030865 Rev 2

7/26

PWD13F60

Electrical data

3.2

Recommended operating conditions

3.3

Thermal data

Table 3. Recommended operating conditions

Symbol

Parameter

Test condition

Min.

Max.

Unit

VCC1, VCC2 Driver supply voltage

6.5(1)

1. The integrated gate driver can work with VCC as low as VCC_thON. Higher supply voltage allows decreasing

the MOSFETs RDS(on).

-V

VBO1, VBO2 BOOTx to OUTx pin voltage

6.5(1)

-V

High-voltage supply

480

Junction temperature

-40

125

°C

Table 4. Thermal data

Symbol

Parameter

Value

Unit

Rth(J-CB) Thermal resistance junction to each MOSFET exposed pad, typ.

1.1

°C/W

Rth(J-A)

Thermal resistance junction to ambient(1)

1. The junction to ambient thermal resistance is obtained simulating the device mounted on a FR4 2s2p

board as the JESD51-5/7 with power dissipation uniformly distributed over the four power MOSFETs.

°C/W

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