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PWD13F60 数据表(PDF) 8 Page - STMicroelectronics |
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PWD13F60 数据表(HTML) 8 Page - STMicroelectronics |
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8 / 26 page ![]() Electrical characteristics PWD13F60 8/26 DocID030865 Rev 2 4 Electrical characteristics 4.1 Driver VCCx = 15 V; TJ = 25 °C, unless otherwise specified. . Table 5. Driver section electrical characteristics Symbol Parameter Test condition Min. Typ. Max. Unit Low supply voltage section VCC_hys VCC UV hysteresis - 0.2 0.4 0.6 V VCC_thON VCC UV turn ON threshold - 5.7 6.1 6.5 V VCC_thOFF VCC UV turn OFF threshold - 5.3 5.7 6.1 V Iqccu Undervoltage quiescent supply current VCC = 4.5 V - 140 190 A Iqcc Quiescent current HINx = GND; LINx = 5 V - 270 350 A Bootstrapped supply voltage section IQBO VBO quiescent current VBO = 15 V LINx = GND; HINx = 5 V -60 97 A ILK Bootstrap leakage current VOUTx = VBOOTx = VS = 600 V; VCC = LINx = HINx = GND -- 1 A RBD(on) Bootstrap driver on-resistance(1) LIN = 5 V - 120 - Logic inputs Vil Logic level low threshold voltage - 0.80 - 1.10 V Vih Logic level high threshold voltage - 1.90 - 2.30 V Iih Logic '1' input bias current LINx = HINx = 15 V 30 40 65 A Iil Logic '0' input bias current LINx = HINx = GND - - 1 A 1. RBD(on) is tested in the following way: RBD(on) = [(VCC - VBOOTa) - (VCC - VBOOTb)] / [Ia - Ib] Where: Ia is the BOOT pin current when VBOOT = VBOOTa; Ib is the BOOT pin current when VBOOT = VBOOTb. |
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