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TDA7786 数据表(PDF) 31 Page - STMicroelectronics |
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TDA7786 数据表(HTML) 31 Page - STMicroelectronics |
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31 / 54 page ![]() DocID026122 Rev 5 31/54 TDA7786, TDA7786M Electrical specifications 53 3.4.3 VCO Vnoise Input noise voltage - - 0.7 1.0 nV/ Hz IIP3 3rd order intercept point @ maximum LNA gain 116 120 - dBµV IIP2 2rd order intercept point @ maximum LNA gain 121 127 - dBµV AM PIN diode IIP2 2rd order intercept point Full attenuation, Csource = 80 pF, f = 1 MHz 134 140 - dBµV Res Minimum resistance - - 5 15 Ω Cin Input capacitance High ohmic - 2 - pF AM AGC AGC-Thr Referred to mixer input; RF level Mix 1,2 min setting 80 83 86 dBµV Mix 1,2 max setting 92.6 95.6 98.6 Thr-steps Threshold steps - 1.3 1.8 2.3 dB - Threshold error @ Tamb -2.5 - 2.5 dB - Threshold temperature drift - -3 - 3 dB - PIN diode source current @ Tamb See note(2) -10 - - mA - PIN diode sink current - 15 30 45 µA - PIN diode source current in constant current mode @ Tamb See note(2) -1 - - mA 1. The gain is internally 6 dB higher than what measured at the test output. This is due to the differential to single-ended conversion used for the test output. 2. The current is generated by a PTAT (proportional to absolute temperature) source, and has therefore a temperature dependency described by: ∆I/Io = ∆T/To, with Io being the current at ambient temperature (25 °C) and To the ambient temperature (25 °C) expressed in Kelvin, that is 298K. Table 18. AM - section (continued) Symbol Parameter Test condition Min Typ Max Units Table 19. VCO Symbol Parameter Test condition Min Typ Max Units fvco,min Minimum VCO oscillation frequency (1) -- - 2.34 GHz fvco,max Maximum VCO oscillation frequency (2) 3.025 - - GHz PN Phase noise of LO Locked VCO; values referred @ 100MHz @ 100 Hz @ 1 kHz @ 10 kHz - -105 -115 -115 -dBc/Hz dev deviation error (RMS) FM reception, deemphasis 50 µs, faudio=20 Hz...20 kHz -5 8 Hz 1. Limited by application Firmware to 2.1 GHz. 2. Limited by application Firmware to 3.1 GHz. |
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