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TLV9152SIRUGR 数据表(PDF) 25 Page - Texas Instruments |
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TLV9152SIRUGR 数据表(HTML) 25 Page - Texas Instruments |
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25 / 63 page ![]() C load + ± V in V out +V s R iso -V s 25 TLV9151, TLV9152, TLV9154 www.ti.com SBOS986B – OCTOBER 2019 – REVISED MAY 2020 Product Folder Links: TLV9151 TLV9152 TLV9154 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated For additional drive capability in unity-gain configurations, improve capacitive load drive by inserting a small resistor, RISO, in series with the output, as shown in Figure 46. This resistor significantly reduces ringing and maintains DC performance for purely capacitive loads. However, if a resistive load is in parallel with the capacitive load, then a voltage divider is created, thus introducing a gain error at the output and slightly reducing the output swing. The error introduced is proportional to the ratio RISO / RL, and is generally negligible at low output levels. A high capacitive load drive makes the TLV915x well suited for applications such as reference buffers, MOSFET gate drives, and cable-shield drives. The circuit shown in Figure 46 uses an isolation resistor, RISO, to stabilize the output of an op amp. RISO modifies the open-loop gain of the system for increased phase margin. Figure 46. Extending Capacitive Load Drive With the TLV9151 |
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