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AT25QL641 数据表(PDF) 67 Page - Dialog Semiconductor |
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AT25QL641 数据表(HTML) 67 Page - Dialog Semiconductor |
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67 / 77 page ![]() 66 AT25QL641 DS-25QL641–130E–10/2018 Figure 8-1. Power-up Timing and Voltage Levels 8.1 DC Electrical Characteristics Table 8-4. Power-up Timing and Write Inhibit Threshold Parameter Symbol (1) 1. These parameters are characterized at -10C and +85C only Min Max Units VCC (min) to CS low tVSL 10 µs Time Delay before Write Instruction t PUW 1 10 ms Write Inhibit Threshold Voltage VWI 1.0 1.4 V Table 8-5. DC Electrical Characteristics Parameter Symbol Condition Min Typ Max Units Input Capacitance (1) CIN VIN = 0V 6 pF Output Capacitance(1) C OUT VOUT = 0V 8 pF Input Leakage I LI ±2 µA Output Leakage I LO ±2 µA Standby Current I CC1 CS = VCC VIN = GND or VCC 10 50 µA Power Down Current I CC2 CS = VCC VIN = GND or VCC 2 20 µA Current Read Data Dual/Quad 1 MHz (2) I CC3 C = 0.1 VCC / 0.9 VCC IO = Open 7 mA |
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