USB82642 datasheet(43/64 Pages) MICROCHIP

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DS60001253F-page 43

USB82642

8.0

DC PARAMETERS

8.1

Maximum Guaranteed Ratings

Stresses above the specified parameters may cause permanent damage to the device. This is a stress rating only. Func-

tional operation of the device at any condition above those indicated in the operation sections of this specification is not

implied. When powering this device from laboratory or system power supplies the absolute maximum ratings must not

be exceeded or device failure can result. Some power supplies exhibit voltage spikes on their outputs when the AC

power is switched on or off. In addition, voltage transients on the AC power line may appear on the DC output. When

this possibility exists, a clamp circuit should be used.

Parameter

Symbol

Min

Max

Units

Comments

Storage Tem-

perature

TSTOR

-55

150

°C

3.3 V supply

voltage

VDD33,

VDDA33

-0.5

4.0

Voltage on

CRD_PWD

--0.5

VDD33 + 0.3

When internal power FET

operation of these pins are

enabled, these pins may be

simultaneously shorted to

ground or any voltage up to

3.63 V indefinitely, without

damage to the device as

long as VDD33 and VDDA33

are less than 3.63 V and TA

is less than 70oC.

Voltage on

any signal pin

--0.5

VDD33 + 0.3

Voltage on

XTAL1

--0.5

3.6

HBM ESD

Performance

8kV

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