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USB82642 数据表(PDF) 45 Page - Microchip Technology |
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USB82642 数据表(HTML) 45 Page - Microchip Technology |
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45 / 64 page ![]() 2012-2021 Microchip Technology Inc. DS60001253F-page 45 USB82642 8.3 Package Thermal Specifications 8.4 DC Electrical Characteristics TABLE 8-1: 48-PIN VQFN PACKAGE THERMAL PARAMETERS Parameter Symbol Value (°C/W) Velocity (METERS Comments Thermal Resistance Junction to Ambient JA 28 0 Measured from the die to the ambient air 24 1 22 2.5 Thermal Resistance Junction to Top of Case JC 2.2 0 Thermal Resistance Junction-to- Top-of-Package JT 0.2 0 - Parameter Symbol Min Typ Max Units Comments I, IPU, IPD Type Input Buffer Low Input Level VILI 0.8 V TTL Levels High Input Level VIHI 2.0 V Pull Down PD 72 µA Pull Up PU 58 µA IS Type Input Buffer Low Input Level VILI 0.8 V TTL Levels High Input Level VIHI 2.0 V ICLK Input Buffer Low Input Level VILCK 0.5 V High Input Level VIHCK 1.4 V Input Leakage IIL -10 +10 µA VIN = 0 to VDD33 Input Leakage (All I and IS buffers) Low Input Leakage IIL -10 +10 µA VIN = 0 V High Input Leakage IIH -10 +10 µA VIN = VDD33 |
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