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ST25DV64K 数据表(PDF) 68 Page - STMicroelectronics

部件名 ST25DV64K
功能描述  Dynamic NFC/RFID tag IC with 4-Kbit, 16-Kbit or 64-Kbit EEPROM, and fast transfer mode capability
PDF  200 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST25DV64K 数据表(HTML) 68 Page - STMicroelectronics

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Byte write is inhibited if byte complies with conditions described in Section 6.4.1 I2C Byte write, in addition:
•
Byte is in user memory but does not belong to same area than previous received byte (area border crossing
is forbidden).
•
256 write occurrence have already been reached in the same sequential write.
EEPROM memory (user memory and system configuration) is internally organized in pages of 4 bytes long. Data
located in a same page all share the same most significant memory address bits b16-b2.
I2C sequential write programming time in the EEPROM memory is dependent on this internal organization: total
programming time is the I2C write time tW (as defined in Table 248. I2C AC characteristics up to 85°C and
Table 249. I2C AC characteristics up to 125°C) multiplied by the number of internal EEPROM pages where the
data must be programmed, including incomplete pages. For example, a 256 Bytes I2C sequential write, starting at
address 0002h will write data over 65 pages. Total write time in this case is tW x 65.
Figure 26. Write mode sequences when write is not inhibited
Byte
Write
Dev Select
Byte address Byte address
Data in
Sequential
Write
Dev Select
Byte address Byte address
Data in 1
Data in 2
Data in N
ACK
R/W
ACK
ACK
ACK
ACK
ACK
ACK
ACK
R/W
ACK
ACK
Note:
N ≤ 256
Figure 27. Write mode sequences when write is inhibited
Byte
Write
Dev select
Byte address
Byte address
Data in
Sequential
Write
Dev select
Byte address
Byte address
Data in 1
Data in 2
Sequential
Write(cont'd)
Data in N
ACK
ACK
ACK
NO ACK
R/W
ACK
ACK
ACK
NO ACK
R/W
NO ACK
NO ACK
Note:
N ≤ 256
ST25DV04K ST25DV16K ST25DV64K
I2C Write operations
DS10925 - Rev 9
page 68/200



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