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ST25DV64K 数据表(PDF) 35 Page - STMicroelectronics

部件名 ST25DV64K
功能描述  Dynamic NFC/RFID tag IC with 4-Kbit, 16-Kbit or 64-Kbit EEPROM, and fast transfer mode capability
PDF  200 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST25DV64K 数据表(HTML) 35 Page - STMicroelectronics

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5.2.2
GPO and power supply
When at the same time RF field is present and VCC is ON, GPO is acting as configured in GPO, GPO_CTRL_Dyn
and IT_TIME registers.
When the RF field disappears, the GPO state is reset and the output level is set to high-Z (open drain) or tied low
(CMOS). Interruption status in IT_STS_Dyn register is maintained until next I2C read or VCC power off.
Table 23. GPO interrupt capabilities in function of RF field
RF field on
RF field off
GPO state is function of RF events (1)
GPO remains High-Z (OD) or tied low (CMOS)
1. If pull-up resistor is powered (Open Drain-IE version), and VDCG is powered (CMOS –JF version).
When VCC is not present, or ST25DVxxx is in low power mode, all events are available on GPO pin, assuming
pull-up resistor is supplied with correct voltage (Open Drain-IE version) or VDCG is powered (CMOS-JF version).
The host can be waken up using GPO interrupt in any power condition.
The exception is FIELD_CHANGE when RF field is falling, which can’t be reported on GPO output if VCC is off or
in low power mode (no power supply on ST25DVxxx).
Table 24. GPO interrupt capabilities in function of VCC power supply
GPO events
VCC OFF
VCC ON and LPD high (1)
(low power mode)
VCC ON and LPD low(1)
FIELD_CHANGE if RF field
disappears
GPO remains High-Z (OD)
or tied low (CMOS)
GPO remains High-Z (OD) or tied
low (CMOS) (2)
Pulse emitted on GPO
Any other activated RF event
GPO state is function of RF
events(2)
GPO state is function of RF events(2)
GPO state is function of
RF events(2)
1. For STM25DVxxK-JF only.
2. If pull-up resistor is powered (Open Drain-IE version) and VDCG is powered (CMOS-JF version).
ST25DV04K ST25DV16K ST25DV64K
GPO
DS10925 - Rev 9
page 35/200



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