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M76DW52003BA 数据表(PDF) 8 Page - STMicroelectronics |
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M76DW52003BA 数据表(HTML) 8 Page - STMicroelectronics |
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8 / 27 page ![]() M76DW52003TA, M76DW52003BA 8/27 FUNCTIONAL DESCRIPTION The Flash and SRAM components have separate power supplies. They are distinguished by three chip enable inputs: EF for the Flash memory and, E1S and E2S for the SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be in active mode at the same time. The most common example is simultaneous read operations on the Flash and the SRAM which would result in a data bus con- tention. Therefore it is recommended to put the SRAM in the high impedance state when reading the Flash and vice versa (see Table 2 Main Oper- ation Modes for details). Figure 4. Functional Block Diagram AI08714 Flash Memory 32 Mbit (x16) EF G W RPF E1S E2S UBS LBS DQ0-DQ15/A-1 VCCF A18-A20 A0-A17 SRAM 4 Mbit (x16) VSS VCCS VPP/WP RB BYTE |
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