M76DW52003BA datasheet(15/27 Pages) STMICROELECTRONICS

部件名	M76DW52003BA

功能描述	32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product

PDF	27 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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15 / 27 page

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M76DW52003TA, M76DW52003BA

Table 7. SRAM DC Characteristics

Note: 1. Sampled only, not 100% tested.

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ILI

Input Leakage Current

≤ VIN ≤ VCCS

±1

µA

ILO

Output Leakage Current

≤ VOUT ≤ VCCS,

SRAM Outputs Hi-Z

±1

µA

ICCS

VCC Standby Current

E1S ≥ VCCS – 0.2V

VIN ≥ VCCS – 0.2V or VIN ≤ 0.2V

f = fmax (A0-A17 and DQ0-DQ15

only)

f = 0 (GS, WS, UBS and LBS)

715

µA

E1S ≥ VCCS – 0.2V

VIN ≥ VCCS – 0.2V or VIN ≤ 0.2V, f = 0

715

µA

ICC

Supply Current

f = fmax = 1/AVAV,

VCCS = 3.3V, IOUT = 0 mA

5.5

f = 1MHz,

VCCS = 3.3V, IOUT = 0 mA

1.5

VIL

Input Low Voltage

–0.3

0.8

VIH

Input High Voltage

2.2

VCCS

+0.3

VOL

Output Low Voltage

VCCS = VCC min

IOL = 2.1mA

0.4

VOH

Output High Voltage

VCCS = VCC min

IOH = –1.0mA

2.4

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