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PRELIMINARY DATA

September 2003

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M76DW52003TA

M76DW52003BA

32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory

and 4Mbit (256Kb x16) SRAM, Multiple Memory Product

FEATURES SUMMARY

■

MULTIPLE MEMORY PRODUCT

– 32 Mbit (4Mb x8 or 2Mb x16), Dual Bank, Boot

Block, Flash Memory

– 4 Mbit (256Kb x 16) SRAM

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SUPPLY VOLTAGE

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ACCESS TIME: 70, 90ns

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LOW POWER CONSUMPTION

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ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code, M76DW52003TA: 225Eh

– Bottom Device Code, M76DW52003BA:

225Fh

FLASH MEMORY

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PROGRAMMING TIME

– 10µs per Byte/Word typical

– Double Word/ Quadruple Byte Program

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MEMORY BLOCKS

– Dual Bank Memory Array: 8Mbit+24Mbit

– Parameter Blocks (Top or Bottom Location)

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DUAL OPERATIONS

– Read in one bank while Program or Erase in

other

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ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

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UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

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PROTECT

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TEMPORARY BLOCK UNPROTECTION

MODE

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COMMON FLASH INTERFACE

– 64 bit Security Code

Figure 1. Package

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EXTENDED MEMORY BLOCK

– Extra block used as security block or to store

additional information

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100,000 PROGRAM/ERASE CYCLES per

BLOCK

SRAM

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4 Mbit (256Kb x 16)

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ACCESS TIME: 70ns

■

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POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

FBGA

LFBGA73 (ZA)

8 x 11.6 mm