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M76DW52003BA 数据表(PDF) 13 Page - STMicroelectronics

部件名 M76DW52003BA
功能描述  32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
PDF  27 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M76DW52003BA 数据表(HTML) 13 Page - STMicroelectronics

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M76DW52003TA, M76DW52003BA
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment
Conditions
summarized
in
Table
4,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
The operating and AC measurement parameters
given in this section (see Table 4 below) corre-
spond to those of the stand-alone Flash and
SRAM devices. For compatibility purposes, the
M29DW323D voltage range is restricted to VCCS
in the stacked product.
Table 4. Operating and AC Measurement Conditions
Figure 6. AC Measurement I/O Waveform
Figure 7. AC Measurement Load Circuit
Table 5. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
Flash Memory
SRAM
Units
Min
Max
Min
Max
VCCF Supply Voltage
2.7
3.6
–
–
V
VCCS Supply Voltage
–
–
2.7
3.3
V
Ambient Operating Temperature
–40
85
–40
85
°C
Load Capacitance (CL)
30
30
pF
Input Rise and Fall Times
10
3.3
ns
Input Pulse Voltages
0 to VCCF
0 to VCCF
V
Input and Output Timing Ref. Voltages
VCCF/2
VCCF/2
V
AI08186
VCCF
0V
VCCF/2
AI08187
VCCF
CL
CL includes JIG capacitance
25k
Ω
DEVICE
UNDER
TEST
0.1µF
VCCF
0.1µF
VPP
25k
Ω
Symbol
Parameter
Test Condition
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0V, f=1 MHz
12
pF
COUT
Output Capacitance
VOUT = 0V, f=1 MHz
15
pF



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