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PPC5604BAMLL4R 数据表(PDF) 59 Page - NXP Semiconductors |
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PPC5604BAMLL4R 数据表(HTML) 59 Page - NXP Semiconductors |
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59 / 109 page ![]() Package pinouts and signal descriptions MPC5604B/C Microcontroller Data Sheet, Rev. 15 NXP Semiconductors 59 2.19 Flash memory electrical characteristics 2.19.1 Program/Erase characteristics Table 28 shows the program and erase characteristics. 5 Only for the “P” classification: Data and Code Flash in Normal Power. Code fetched from RAM: Serial IPs CAN and LIN in loop back mode, DSPI as Master, PLL as system Clock (4 x Multiplier) peripherals on (eMIOS/CTU/ADC) and running at max frequency, periodic SW/WDG timer reset enabled. 6 Data Flash Power Down. Code Flash in Low Power. SIRC (128 kHz) and FIRC (16 MHz) on. 10 MHz XTAL clock. FlexCAN: instances: 0, 1, 2 ON (clocked but not reception or transmission), instances: 4, 5, 6 clock gated. LINFlex: instances: 0, 1, 2 ON (clocked but not reception or transmission), instance: 3 clock gated. eMIOS: instance: 0 ON (16 channels on PA[0]–PA[11] and PC[12]–PC[15]) with PWM 20 kHz, instance: 1 clock gated. DSPI: instance: 0 (clocked but no communication). RTC/API ON. PIT ON. STM ON. ADC ON but not conversion except 2 analog watchdog. 7 Only for the “P” classification: No clock, FIRC (16 MHz) off, SIRC (128 kHz) on, PLL off, HPvreg off, ULPVreg/LPVreg on. All possible peripherals off and clock gated. Flash in power down mode. 8 When going from RUN to STOP mode and the core consumption is > 6 mA, it is normal operation for the main regulator module to be kept on by the on-chip current monitoring circuit. This is most likely to occur with junction temperatures exceeding 125 °C and under these circumstances, it is possible for the current to initially exceed the maximum STOP specification by up to 2 mA. After entering stop, the application junction temperature will reduce to the ambient level and the main regulator will be automatically switched off when the load current is below 6 mA. 9 Only for the “P” classification: ULPreg on, HP/LPVreg off, 32 KB RAM on, device configured for minimum consumption, all possible modules switched off. 10 ULPreg on, HP/LPVreg off, 8 KB RAM on, device configured for minimum consumption, all possible modules switched off. Table 28. Program and erase specifications Symbol C Parameter Value Unit Min Typ1 1 Typical program and erase times assume nominal supply values and operation at 25 °C. Initial max2 2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage. Max3 3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum values are characterized but not guaranteed. Tdwprogram CC C Double word (64 bits) program time 4 4 Actual hardware programming times. This does not include software overhead. —22 50 500 µs T16Kpperase 16 KB block preprogram and erase time — 300 500 5000 ms T32Kpperase 32 KB block preprogram and erase time — 400 600 5000 ms T128Kpperase 128 KB block preprogram and erase time — 800 1300 7500 ms Tesus CC D Erase suspend latency — — 30 30 µs |
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