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PPC5606BAVLL6R 数据表(PDF) 43 Page - NXP Semiconductors |
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PPC5606BAVLL6R 数据表(HTML) 43 Page - NXP Semiconductors |
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43 / 114 page ![]() Electrical characteristics MPC5607B Microcontroller Data Sheet, Rev. 10 NXP Semiconductors 43 Figure 6. I/O input DC electrical characteristics definition 4.6.3 I/O output DC characteristics The following tables provide DC characteristics for bidirectional pads: • Table 16 provides weak pull figures. Both pull-up and pull-down resistances are supported. Table 15. I/O input DC electrical characteristics Symbol C Parameter Conditions1 1 V DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified Value Unit Min Typ Max VIH SR P Input high level CMOS (Schmitt Trigger) — 0.65VDD —VDD +0.4 V VIL SR P Input low level CMOS (Schmitt Trigger) — −0.4 — 0.35VDD VHYS CC C Input hysteresis CMOS (Schmitt Trigger) —0.1VDD —— ILKG CC D Digital input leakage No injection on adjacent pin TA = −40 °C — 2 200 nA DTA = 25 °C — 2 200 DTA = 85 °C — 5 300 DTA = 105 °C — 12 500 PTA = 125 °C — 70 1000 WFI 2 2 In the range from 40 to 1000 ns, pulses can be filtered or not filtered, according to operating temperature and voltage. SR P Wakeup input filtered pulse — — — 40 ns WNFI 2 SR P Wakeup input not filtered pulse — 1000 — — ns VIL VIN VIH PDIx = ‘1 VDD VHYS (GPDI register of SIUL) PDIx = ‘0’ |
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