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PPC5606BAVLL6R 数据表(PDF) 64 Page - NXP Semiconductors |
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PPC5606BAVLL6R 数据表(HTML) 64 Page - NXP Semiconductors |
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64 / 114 page ![]() MPC5607B Microcontroller Data Sheet, Rev. 10 Electrical characteristics NXP Semiconductors 64 ECC circuitry provides correction of single bit faults and is used to improve further automotive reliability results. Some units will experience single bit corrections throughout the life of the product with no impact to product reliability. 4.9.2 Flash power supply DC characteristics Table 31 shows the power supply DC characteristics on external supply. Table 29. Flash module life Symbol C Parameter Conditions Value Unit Min Typ Max P/E CC C Number of program/erase cycles per block for 16 KB blocks over the operating temperature range (TJ) — 100,000 — — cycles P/E CC C Number of program/erase cycles per block for 32 KB blocks over the operating temperature range (TJ) — 10,000 100,000 — cycles P/E CC C Number of program/erase cycles per block for 128 KB blocks over the operating temperature range (TJ) — 1,000 100,000 — cycles Retention CC C Minimum data retention at 85 °C average ambient temperature1 1 Ambient temperature averaged over duration of application, not to exceed recommended product operating temperature range. Blocks with 0–1,000 P/E cycles 20 — — years Blocks with 1,001–10,000 P/E cycles 10 — — years Blocks with 10,001–100,000 P/E cycles 5— — years Table 30. Flash read access timing Symbol C Parameter Conditions1 1 V DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified Max Unit fREAD CC P Maximum frequency for Flash reading 2 wait states 64 MHz C 1 wait state 40 C 0 wait states 20 |
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