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PPC5606BAVLL6R 数据表(PDF) 64 Page - NXP Semiconductors

部件名 PPC5606BAVLL6R
功能描述  MPC5607B Microcontroller Data Sheet
PDF  114 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

PPC5606BAVLL6R 数据表(HTML) 64 Page - NXP Semiconductors

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MPC5607B Microcontroller Data Sheet, Rev. 10
Electrical characteristics
NXP Semiconductors
64
ECC circuitry provides correction of single bit faults and is used to improve further automotive reliability
results. Some units will experience single bit corrections throughout the life of the product with no impact
to product reliability.
4.9.2
Flash power supply DC characteristics
Table 31 shows the power supply DC characteristics on external supply.
Table 29. Flash module life
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
P/E
CC C Number of program/erase
cycles per block for 16 KB
blocks over the operating
temperature range (TJ)
100,000
cycles
P/E
CC C Number of program/erase
cycles per block for 32 KB
blocks over the operating
temperature range (TJ)
10,000
100,000
cycles
P/E
CC C Number of program/erase
cycles per block for 128 KB
blocks over the operating
temperature range (TJ)
1,000
100,000
cycles
Retention
CC C Minimum data retention at
85 °C average ambient
temperature1
1 Ambient temperature averaged over duration of application, not to exceed recommended product operating
temperature range.
Blocks with
0–1,000 P/E cycles
20
years
Blocks with
1,001–10,000 P/E
cycles
10
years
Blocks with
10,001–100,000 P/E
cycles
5—
years
Table 30. Flash read access timing
Symbol
C
Parameter
Conditions1
1 V
DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified
Max
Unit
fREAD
CC
P Maximum frequency for Flash reading
2 wait states
64
MHz
C
1 wait state
40
C
0 wait states
20



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