STM32U535NET6QTR datasheet(189/278 Pages) STMICROELECTRONICS

部件名	STM32U535NET6QTR

功能描述	Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM

PDF	278 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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189 / 278 page

DS14217 Rev 1

189/278

STM32U535xx

Electrical characteristics

253

5.3.8

Internal clock timing characteristics

The parameters given in the table below are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 32. The provided curves

are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 80. HSI16 oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI16

HSI16 frequency after factory

calibration

VDD = 3.0 V, TJ = 30 °C

15.92

16.08

MHz

fHSI16(1)

TJ = –10 °C to 100 °C,

1.58 ≤ VDD ≤ 3.6 V

15.84

16.16

TJ = –40 °C to 130 °C,

1.58 ≤ VDD ≤ 3.6 V

15.65

16.25

TRIM(2)

HSI16 user trimming step

kHz

DuCy(HSI16)(2) Duty cycle

tsu(HSI16)(2)

HSI16 oscillator startup time

2.5

3.6

μs

tstab(HSI16)(2)

HSI16 oscillator stabilization time

At 1% of target frequency

IDD(HSI16)(2)

HSI16 oscillator power consumption

150

210

μA

1. Evaluated by characterization. Not tested in production. It does not take into account package and soldering effects.

2. Specified by design. Not tested in production.

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