STM32G0C1NET7 datasheet(77/159 Pages) STMICROELECTRONICS

77 / 159 page

DS13564 Rev 4

77/159

STM32G0C1xC/xE

Electrical characteristics

124

∆IDD(SRAM)

Extra supply

current to

retain SRAM

content(3)

SRAM retention

enabled

1.8 V

1.0

11.5

4.3

265

µA

2.4 V

1.0

11.5

4.3

265

3.0 V

1.1

11.6

4.4

270

3.6 V

1.2

11.6

4.4

270

1. Based on characterization results, not tested in production.

2. Without SRAM retention and with ULPEN bit set

3. To be added to IDD(Standby) as appropriate

Table 33. Current consumption in Standby mode (continued)

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

General

VDD

25°C 85°C 125°C 25°C 85°C

130°C

Table 34. Current consumption in Shutdown mode

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

RTC

VDD

25 °C 85 °C 125 °C 25 °C 85 °C 130 °C

IDD(Shutdown)

Supply current

in Shutdown

mode

Disabled

1.8 V

840

7050

240

3210

39200

2.4 V

965

8050

370

3910

44600

3.0 V

1100

9550

370

4700

51500

3.6 V

1350

11000

500

5700

59400

Enabled, clocked

by LSE bypass at

32.768 kHz

1.8 V

235

1050

7400

290

3850

47000

2.4 V

320

1250

8400

440

4690

53500

3.0 V

425

1500

9950

450

5640

61800

3.6 V

550

1850

11500

590

6840

71200

1. Based on characterization results, not tested in production.

Table 35. Current consumption in VBAT mode

Symbol

Parameter

Conditions

Typ

Unit

RTC

VDD

25°C

85°C

125°C

IDD(VBAT)

Supply current in

VBAT mode

Enabled, clocked by

LSE bypass at

32.768 kHz

1.8 V

195

416

2015

2.4 V

320

530

2366

3.0 V

492

635

2838

3.6 V

627

908

3339

Enabled, clocked by

LSE crystal at

32.768 kHz

1.8 V

130

325

1550

2.4 V

160

400

1800

3.0 V

210

500

2050

3.6 V

285

605

2400

Disabled

1.8 V

160

1450

2.4 V

190

1700

3.0 V

220

1950

3.6 V

270

2250

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