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数据搜索系统，热门电子元器件搜索 |
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STM32G0C1NET7 数据表(PDF) 89 Page - STMicroelectronics |
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STM32G0C1NET7 数据表(HTML) 89 Page - STMicroelectronics |
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89 / 159 page  DS13564 Rev 4 89/159 STM32G0C1xC/xE Electrical characteristics 124 Figure 23. HSI48 frequency versus temperature Low-speed internal (LSI) RC oscillator 1. VDD = 3 V, TA = –40 to 125°C unless otherwise specified. 2. Guaranteed by design. 3. Guaranteed by characterization results. 4. Jitter measurement are performed without clock source activated in parallel. MSv40989V1 -6 -4 -2 0 2 4 6 -50 -30 -10 10 30 50 70 90 110 130 Avg min max °C % Table 46. LSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI LSI frequency VDD = 3.0 V, TA = 30 °C 31.04 - 32.96 kHz VDD = 1.62 V to 3.6 V, TA = -40 to 125 °C 29.5 - 34 tSU(LSI)(2) LSI oscillator start-up time - - 80 130 μs tSTAB(LSI)(2) LSI oscillator stabilization time 5% of final frequency - 125 180 μs IDD(LSI)(2) LSI oscillator power consumption - - 110 180 nA 1. Based on characterization results, not tested in production. 2. Guaranteed by design. |
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