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STM32G0C1NET7 数据表(PDF) 87 Page - STMicroelectronics |
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STM32G0C1NET7 数据表(HTML) 87 Page - STMicroelectronics |
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87 / 159 page ![]() DS13564 Rev 4 87/159 STM32G0C1xC/xE Electrical characteristics 124 5.3.8 Internal clock source characteristics The parameters given in Table 44 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 24: General operating conditions. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator Table 44. HSI16 oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz ∆Temp(HSI16) HSI16 oscillator frequency drift over temperature TA= 0 to 85 °C -1 - 1 % TA= -40 to 125 °C -2 - 1.5 % ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD=1.62 V to 3.6 V -0.1 - 0.05 % TRIM HSI16 frequency user trimming step From code 127 to 128 -8 -6 -4 % From code 63 to 64 From code 191 to 192 -5.8 -3.8 -1.8 For all other code increments 0.2 0.3 0.4 DHSI16(2) Duty Cycle - 45 - 55 % tsu(HSI16)(2) HSI16 oscillator start-up time - - 0.8 1.2 μs tstab(HSI16)(2) HSI16 oscillator stabilization time - - 3 5 μs IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA 1. Based on characterization results, not tested in production. 2. Guaranteed by design. |
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