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HVLED101TR 数据表(PDF) 11 Page - STMicroelectronics

部件名 HVLED101TR
功能描述  Advanced high power factor flyback controller with valley locking and maximum power control
PDF  36 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

HVLED101TR 数据表(HTML) 11 Page - STMicroelectronics

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Symbol
Pin/Block
Parameter
Test condition
Min.
Typ.
Max.
Unit
Timing
TART
Auto-restart time
1.5
2.5
3.5
s
FSW-RU
Ramp-up operating
frequency
15
25
35
kHz
δMAX-RU
Max. Duty cycle
during ramp-up
40
50
60
%
TCF
Maximum duration
of ramp-up phase
120
200
280
ms
FAULT pin characteristics
VFLT-OFF
FAULT
FAULT pin disable
threshold
Falling edge [trackFLT]
740
800
860
mV
VFLT-ON
FAULT
FAULT pin enable
threshold
Rising edge [trackFLT]
790
850
910
mV
IFLT-BIAS
FAULT
FAULT pin biasing
current
FAULT = GND
45
50
55
µA
VFLT-OPEN
FAULT
FAULT pin open
detection voltage
Active mode
2.6
2.7
2.8
V
Gate driver
VGDH
GD
Output high voltage IGD source = 5 mA
15.5
V
VGDL
GD
Output low voltage
IGD sink = 5 mA
0.1
V
ISRC
GD
Output source peak
current
Max. value [not tested in production]
0.48
0.6
A
ISNK
GD
Output sink peak
current
Max. value [not tested in production]
0.83
1.2
A
TF
GD
Fall time
CGD = 1 nF, from 14.5 V to 1.5 V
15
ns
TR
GD
Rise time
CGD = 1 nF, from 1.5 V to 14.5 V
30
ns
RP-DWN
GD
Gate driver pull-
down resistor
80
kΩ
VL pin characteristics
VVL-BIAS
VL
Saturation voltage
VL = open, VFB = 3V, VOPTO = 2.8V
[TrackVL]
2.8
V
IVL-P-UP
VL
Pull-up current
VVL = 0 V, VFB = 3 V, VOPTO = 1 V
[TrackVL]
10
µA
VVL = 0 V, VFB = 3 V, VOPTO = 2 V
[TrackVL]
20
µA
VL1H
VL
Hysteresis level for
VL1
1.9
V
VL1
VL
QR to 2nd valley
threshold
1.7
V
VL2H
VL
Hysteresis level for
VL2
1.5
V
VL2
VL
2nd to 3rd valley
threshold
1.3
V
VL3
VL
3rd to 4th valley
threshold
1.2
V
VL4
VL
4th to 5th valley
threshold
1.1
V
HVLED101
Electrical characteristics
DS14143 - Rev 2
page 11/36



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