S29CD032J datasheet(73/76 Pages) SPANSION

73 / 76 page

September 27, 2006 S29CD-J_CL-J_00_B1

S29CD-J & S29CL-J Flash Family

Da ta

Shee t

(Prelim i nar y )

21. Revision History

Section

Description

Revision A0 (March 1, 2005)

Initial release.

Revision A1 (April 15, 2005)

Ordering Information and Valid

Combinations tables

Updated to include lead Pb-free options.

Revision A2 (January 20, 2006)

Ordering Information

Added “Contact factory” for 75 MHz. Modified Ordering Options for Characters 15 & 16 to reflect

autoselect ID & top/bottom boot. Changed “N” for Extended Temperature Range to “M”.

Input/Output Descriptions

Removed Logic Symbol Diagrams.

Additional Resources

Added section.

Memory Address Map

Changed “Bank 2” to “Bank 1”.

Simultaneous Read/Write Operation

Removed Ordering Options Table (Tables 3 & 4).

Advanced Sector Protection/

Unprotection

Added Advanced Sector Protection/Unprotection figure. Added figures for PPB Erase & Program

Algorithm.

Electronic Marking

Added in Electronic Marking section.

Absolute Maximum Ratings

Modified VCC Ratings to reflect 2.6 V and 3.6 V devices. Modified VCC Ratings to reflect 16 Mb & 32

Mb devices.

AC Characteristics

Added Note “tOE during Read Array”.

Asynchronous Read Operation

Changed values of tAVAV, tAVQV, tELQV, tGLQV in table.

Conventional Read Operation Timings

Moved tDF line to 90% on the high-Z output in figure.

Burst Mode Read for 32 Mb & 16 Mb

Added tAAVS and tAAVH timing parameters to table. Changed tCH to tCLKH. Changed tCL to tCLKL.

Removed the following timing parameters:

•tDS (Data Setup to WE# Rising Edge)

•tDH (Data Hold from WE# Rising Edge)

•tAS (Address Setup to Falling Edge of WE#)

•tAH (Address Hold from Falling Edge of WE#)

•tCS (CE# Setup Time)

•tCH (CE# Hold Time)

•tACS (Address Setup Time to CLK)

•tACH (Address Hold Time from ADV# Rising Edge of CLK while ADV# is Low)

Burst Mode Read (x32 Mode)

Added the following timing parameters:

•tAAVS

•tDVCH

•tINDS

•tINDH

Asynchronous Command Write Timing

In figure, changed tOEH to tWEH; changed tWPH to tOEP.

Synchronous Command Write/Read

Timing

Removed tWADVH and tWCKS from figure.

WP# Timing

In figure, changed tCH to tBUSY

Erase/Program Operations

In table, added Note 3: Program/Erase parameters are the same regardless of synchronous or

asynchronous mode. Added tOEP (OE# High Pulse)

Alternative CE# Controlled Erase/

Program Operations

Removed tOES from table. Added tWADVS and tWCKS

Appendix 2: Command Definitions

Removed “or when device is in autoselect mode” from Note 14.

Revision B0 (June 12, 2006)

Global

Changed document status to Preliminary.

Distinctive Characteristics

Changed cycling endurance from typical to guaranteed.

Performance Characteristics

Updated Max Asynch. Access Time, Max CE# Access Time, and Max OE# Access time in table.

Ordering Information

Updated additional ordering options in designator breakout table. Updated valid combination tables.

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