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ADP1821ARQZ-R7 数据表(PDF) 21 Page - Analog Devices |
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ADP1821ARQZ-R7 数据表(HTML) 21 Page - Analog Devices |
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21 / 24 page ![]() ADP1821 Rev. B | Page 21 of 24 APPLICATION CIRCUITS The ADP1821 controller can be configured to regulate an output with a load of more than 20 A if the power components, such as the inductor, MOSFETs, and the bulk capacitors, are chosen carefully to meet the power requirement. The maximum load and power dissipation are limited by the power-train compo- nents. Figure 1 shows a typical application circuit that can drive an output load of 20 A. Note that two low-side MOSFETs are needed to deliver the 20 A load. In this example, two power rails are needed: a 5 V bias supply, which needs to supply about 30 mA to power the ADP1821 at full load, and a power input rail, which ranges from 2.5 V to 20 V. The bulk input and output capacitors used in this example are Sanyo’s OSCONTM capaci- tors, which have low ESR and high-current ripple rating. An alternative to the OSCON capacitors are the polymer aluminum capacitors that are available from other manufacturers such as United Chemi-Con. Aluminum electrolytic capacitors, such as Rubycon’s ZLG low-ESR series, can also be paralleled up at the input or output to meet the current ripple requirement. Since the aluminum electrolytic capacitors have higher ESR and much larger variation in capacitance over the operating temperature range, a larger bulk input and output capacitance is needed to reduce the effective ESR and suppress the current ripple. The ADP1821 can be configured to drive an output load of less than 1 A. Figure 21 shows a typical application circuit that drives a 3 A load in an all multilayer ceramic capacitor (MLCC) solution. Notice that the two MOSFETs used in this example are dual-channel MOSFETs in a PowerPAK® SO-8 package, which reduces cost and saves layout space. For input voltages less than 3.7 V, it is recommended to use MOSFETs that are fully turned on at VGS less than 3 V. Because there’s a forward voltage (VF) drop across the Schottky diode D1, for input voltages less than 3.3 V, the effective voltage to the internal gate drivers may not be enough to drive a large load at the output. A Schottky diode with VF less than 0.5 V at IF of 100 mA is recommended for input voltages less than 3.3 V. GND PVCC ADP1821 SHDN VCC BST DH SW CSL DL PGND FB FREQ SYNC PWGD COMP SS 1µF 1µF 10Ω 2kΩ 4.1kΩ 84.5Ω 1kΩ 100kΩ M1 M2 L1 = 2.2µH OUTPUT 1.8V, 3A VIN = 3V TO 5.5V D1 AGND 100nF 6.65kΩ 1.5nF 120pF 0.22µF + CIN1 1µF 10V + CIN2 10µF 10V ×2 COUT1 1µF 10V COUT2 47µF 6.3V COUT3 100µF 6.3V 8.2nF fSW = 600kHz CIN2: MURATA, GRM21BR61A106K COUT3: MURATA, GRM31CR60J107M M1, M2: VISHAY, DUAL-CHANNEL MOSFET Si7940DP L1: TOKO, FDV0620-2R2M COUT2: MURATA, GRM31CR60J476M D1: CENTRAL SEMI, CMDSH2-4L Figure 21. Typical Application Circuit with all Multilayer Ceramic Capacitors (MLCC), 3.3 V to 5 V Input |
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