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ADP1821ARQZ-R7 数据表(PDF) 21 Page - Analog Devices

部件名 ADP1821ARQZ-R7
功能描述  Step-Down DC-to-DC Controller
PDF  24 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP1821ARQZ-R7 数据表(HTML) 21 Page - Analog Devices

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ADP1821
Rev. B | Page 21 of 24
APPLICATION CIRCUITS
The ADP1821 controller can be configured to regulate an output
with a load of more than 20 A if the power components, such
as the inductor, MOSFETs, and the bulk capacitors, are chosen
carefully to meet the power requirement. The maximum load
and power dissipation are limited by the power-train compo-
nents. Figure 1 shows a typical application circuit that can drive
an output load of 20 A. Note that two low-side MOSFETs are
needed to deliver the 20 A load. In this example, two power rails
are needed: a 5 V bias supply, which needs to supply about 30
mA to power the ADP1821 at full load, and a power input rail,
which ranges from 2.5 V to 20 V. The bulk input and output
capacitors used in this example are Sanyo’s OSCONTM capaci-
tors, which have low ESR and high-current ripple rating. An
alternative to the OSCON capacitors are the polymer aluminum
capacitors that are available from other manufacturers such as
United Chemi-Con. Aluminum electrolytic capacitors, such as
Rubycon’s ZLG low-ESR series, can also be paralleled up at the
input or output to meet the current ripple requirement. Since
the aluminum electrolytic capacitors have higher ESR and much
larger variation in capacitance over the operating temperature
range, a larger bulk input and output capacitance is needed to
reduce the effective ESR and suppress the current ripple.
The ADP1821 can be configured to drive an output load of
less than 1 A. Figure 21 shows a typical application circuit that
drives a 3 A load in an all multilayer ceramic capacitor (MLCC)
solution. Notice that the two MOSFETs used in this example are
dual-channel MOSFETs in a PowerPAK® SO-8 package, which
reduces cost and saves layout space. For input voltages less than
3.7 V, it is recommended to use MOSFETs that are fully turned
on at VGS less than 3 V. Because there’s a forward voltage (VF)
drop across the Schottky diode D1, for input voltages less than
3.3 V, the effective voltage to the internal gate drivers may not
be enough to drive a large load at the output. A Schottky diode
with VF less than 0.5 V at IF of 100 mA is recommended for
input voltages less than 3.3 V.
GND
PVCC
ADP1821
SHDN
VCC
BST
DH
SW
CSL
DL
PGND
FB
FREQ
SYNC
PWGD
COMP
SS
1µF
1µF
10Ω
2kΩ
4.1kΩ
84.5Ω
1kΩ
100kΩ
M1
M2
L1 = 2.2µH
OUTPUT
1.8V, 3A
VIN = 3V TO 5.5V
D1
AGND
100nF
6.65kΩ
1.5nF
120pF
0.22µF
+
CIN1
1µF
10V
+
CIN2
10µF
10V
×2
COUT1
1µF
10V
COUT2
47µF
6.3V
COUT3
100µF
6.3V
8.2nF
fSW = 600kHz
CIN2: MURATA, GRM21BR61A106K
COUT3: MURATA, GRM31CR60J107M
M1, M2: VISHAY, DUAL-CHANNEL MOSFET Si7940DP
L1: TOKO, FDV0620-2R2M
COUT2: MURATA, GRM31CR60J476M
D1: CENTRAL SEMI, CMDSH2-4L
Figure 21. Typical Application Circuit with all Multilayer Ceramic Capacitors (MLCC), 3.3 V to 5 V Input



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