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AM29BDS643G 数据表(PDF) 16 Page - Advanced Micro Devices

部件名 AM29BDS643G
功能描述  64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  49 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29BDS643G 数据表(HTML) 16 Page - Advanced Micro Devices

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Am29BDS643G
25692A2 May 8, 2006
D A TA
SH EE T
Table 4.
System Interface String
Table 5.
Device Geometry Definition
Addresses
Data
Description
1Bh
0017h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present) Refer to 4Dh.
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present) Refer to 4Eh.
1Fh
0003h
Typical timeout per single byte/word write 2N µs
20h
0000h
Typical timeout for Min. size buffer write 2N
µs (00h = not supported)
21h
0008h
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0005h
Max. timeout for byte/word write 2N times typical
24h
0000h
Max. timeout for buffer write 2N times typical
25h
0004h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Addresses
Data
Description
27h
0017h
Device Size = 2N byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
2Ch
0004h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
005Eh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0003h
0000h
0040h
0000h
Erase Block Region 2 Information
35h
36h
37h
38h
001Eh
0000h
0000h
0001h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
0003h
0000h
0040h
0000h
Erase Block Region 4 Information



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