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AM29BDS643G 数据表(PDF) 33 Page - Advanced Micro Devices

部件名 AM29BDS643G
功能描述  64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  49 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29BDS643G 数据表(HTML) 33 Page - Advanced Micro Devices

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May 8, 2006 25692A2
Am29BDS643G
31
D A TA
SH EE T
DC CHARACTERISTICS
CMOS Compatible
Note:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal to ICC3.
5. Total current during accelerated programming is the sum of VPP and VCC currents.
6. Specifications assume 8 I/Os switching.
Parameter Description
Test Conditions (Note 1)
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCCmax
±1
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCCmax
±1
µA
ICCB
VCC Active Burst Read Current
(Note 6)
CE# = VIL, OE# = VIL
25
30
mA
ICC1
VCC Active Asynchronous Read
Current
CE# = VIL, OE# = VIH
5 MHz
12
16
mA
1 MHz
3.55mA
ICC2
VCC Active Write Current (Note 3)
CE# = VIL, OE# = VIH, VPP = VIH
15
40
mA
ICC3
VCC Standby Current (Note 4)
CE# = VIH, RESET# = VIH
0.2
10
µA
ICC4
VCC Reset Current
RESET# = VIL, CLK = VIL
0.2
10
µA
ICC5
VCC Active Current
(Read While Write)
CE# = VIL, OE# = VIL
40
60
mA
IPP
Accelerated Program Current
(Note 5)
CE# = VIL, OE# = VIH,
VPP = 12.0 ± 0.5 V
VPP
715
mA
VCC
510
mA
VIL
Input Low Voltage
–0.5
0.4
V
VIH
Input High Voltage
VCC – 0.4
VCC + 0.2
V
VOL
Output Low Voltage
IOL = 100 µA, VCC = VCC min
0.1
V
VOH
Output High Voltage
IOH = –100 µA, VCC = VCC min
VCC – 0.1
V
VID
Voltage for Accelerated Program
11.5
12.5
V
VLKO
Low VCC Lock-out Voltage
1.0
1.4
V



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