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AM29BDS643G 数据表(PDF) 45 Page - Advanced Micro Devices |
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AM29BDS643G 数据表(HTML) 45 Page - Advanced Micro Devices |
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45 / 49 page ![]() May 8, 2006 25692A2 Am29BDS643G 43 D A TA SH EE T AC CHARACTERISTICS Note: Devices should be programmed with wait states as discussed in the “Programmable Wait State” section on page 10. Figure 20. Initial Access with Power Saving (PS) Function and Address Boundary Latency Note: If tAVDSM > 1 CLK cycle, wait state usage is reduced. Figure shows 40 MHz clock, handshaking enabled. Wait state usage is 4 clock cycles instead of 5. Note that tAVDSM must be less than 76 µs for burst operation to begin. Figure 21. Example of Extended Valid Address Reducing Wait State Usage CLK AVD# RDY PS Address High-Z High-Z A/DQ0: A/DQ15 PS OE# D0 D1 D2 PS1 PS2 device is programmable from 2 to 7 total cycles during initial access (here, programmable wait state function is set to 04h; 6 cycles total) PS high if data is inverted, low if data is not inverted 2 additional wait states if address is at boundary 1 additional wait state to indicate PS is enabled AVD# low with clock present enables burst read mode Address A16:A21 boundary latency tOE CLK AVD# RDY High-Z A/DQ OE# CE# D0 D1 D2 tIACC2 tAVDSM Addresses |
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